-
1 doping type
тип легуючої домішки; тип домішкової електропровідностіEnglish-Ukrainian dictionary of microelectronics > doping type
-
2 type
-
3 delta-type doping structure
структура з розподілом домішки у вигляді δ-функціїEnglish-Ukrainian dictionary of microelectronics > delta-type doping structure
-
4 n-type doping technique
метод легування донорною домішкоюEnglish-Ukrainian dictionary of microelectronics > n-type doping technique
-
5 impurity
1) (легуюча) домішка 2) забруднення, небажана домішка - atomic impurity
- background impurity
- base impurity
- channel-stop impurity
- compensated impurity
- compensating impurity
- conductivity -type- determining impurity
- conductivity determining impurity
- contaminating impurity
- deep-level impurity
- deep-lying impurity
- diffusant impurity
- diffusing impurity
- donor impurity
- dopant impurity
- doping impurity
- emitter impurity
- free carrier impurity
- group V impurity
- implanted impurity
- interstitial impurity
- ion implanted impurity
- lifetime killing impurity
- lifetime shortening impurity
- migrating impurity
- molecular impurity
- n-type impurity
- polarized impurity
- p-type impurity
- shallow-level impurity
- shallow-lying impurity
- spin-on impurity
- stoichiometric impurity
- substitutional impurity
- transition metal impurity
- trap impurity
- ultratrace impurity -
6 structure
1. ім. структура; конструкція 2. дієсл. формувати структуру - array structure
- band structure
- basic structure
- bilevel structure
- bipolar structure
- bridge structure
- charge-coupled device structure
- charge-coupled structure
- charge-transfer device structure
- charge-transfer structure
- chip structure
- CMOS structure
- contiguous-disk propagating structure
- data structure
- delta-type doping structure
- disordered structure
- double-barrier parabolic well structure
- double-implanted structure
- functional structure
- gate structure
- graded structure
- heterogeneous structure
- heterojunction structure
- homogeneous structure
- implanted structure
- insulated substrate structure
- integrated circuit structure
- integrated structure
- interconnection structure
- interdigital collector structure
- interface structure
- isolation-moat structure
- Josephson-effect structure
- junction-isolated structure
- latchup resistant structure
- lateral structure
- lateral transistor structure
- lattice structure
- lattice-strained structure
- lead structure
- logic structure
- MAS structure
- mask structure
- merged structure
- mesa -type structure
- mesa structure
- MIM structure
- MIS structure
- MNOS structure
- monolithic-typestructure
- monolithicstructure
- MOS structure
- MSM structure
- MTOS structure
- multigate structure
- multilayer structure
- multilevel structure
- nonhomogeneous-base structure
- n-p-n structure
- nonresonant surface реriodical structure
- oxide-isolated structure
- pin structure
- planar structure
- planar superlattice structure
- p-n-p structure
- polycrystalline resistor structure
- propagating structure
- quantum-box structure
- quantum well structure
- quasi-one dimensional structure
- recessed structure
- regular crystal structure
- self-aligned gate structure
- self-registered gate structure
- semiconductor structure
- semi-ROX structure
- series-gated structure
- shallow chip structure
- shield structure
- short-channel device structure
- short-channel structure
- SIC structure
- silicide-on-polysilicon structure
- silicon-in-sapphire structure
- silicon-on- insulator structure
- silicon- insulator structure
- silicon-on-sapphire structure
- silicon-on-spinel structure
- silicon-over oxide-semiconductor structure
- single-crystal structure
- slow-wave structure
- sphalerite-type structure
- submicrometer structure
- superlattice structure
- surface periodical structure
- test structure
- tiered structure
- totally ordered structure
- trench structure
- trench-gate structure
- trench isolation structure
- triple-diffusion structure
- triple-poly structure
- twin-well structure
- ultra-small structure
- unipolar structure
- van der Pauw structure
- vertical injector structure
- vertically integrated structure
- V-groove structure
- wafer асceptance test structure
- wiring layer structure
- zinc blende structureEnglish-Ukrainian dictionary of microelectronics > structure
-
7 ion
іон- acceptor-impurityion- acceptorion
- ad ion
- donor-impurityion
- donorion
- dopant ion
- doping ion
- impurity ion
- n-type impurity ion
- parent molecular ions
- p-type impurity ion
- reactive ion -
8 material
матеріал - acceptor material
- adulterated semiconductor material
- base material
- binding material
- brittle material
- bubble material
- carrier material
- cermet material
- coarse-featured resist material
- composite material
- compound semiconductor material
- conductivity-type imparting material
- contact material
- contrast enhancing material
- dopant masking material
- doped material
- doping material
- electronic material
- electron resist material
- encapsulating material
- encapsulation material
- epitaxial material
- etchant masking material
- etching material
- evaporated material
- evaporation material
- filler material
- film material
- fine-featured resist material
- foreign material
- fragile material
- group III-V compound semiconductor material
- heavily doped material
- high-resistivity material
- host material
- impurity material
- laminated material
- liquid-crystal material
- lowly doped material
- low-resistivity material
- LSCO material
- magnetostrictive material
- mask-forming material
- mask material
- mismatched materials
- molding material
- multilayer material
- negative-image material
- organosilicone material
- packaging material
- parent material
- patterned material
- photoresist material
- photoresponsive material
- photosensitive material
- piezoelectric material
- plastic material
- polycrystalline material
- positive-image material
- refractory material
- resist material
- resistive material
- semiconductive material
- semiconductor material
- semiconductor-glass composite material
- silicon-on-insulator material
- silicon-on-sapphire material
- Si-MBE material
- single-crystal material
- spinel material
- starting material
- stop-etch material
- substrate material
- superconducting material
- support material
- thallium-based material
- thixotropic material
- virgin material
- Y–Ba–Cu–O material
- Y1–Ba2–Cu3–O7-x material
- 1-2-3 material -
9 region
область; зона; ділянка (див. т-ж area, zone) - active TEG GaInAs region
- alloyed region
- avalanche region
- barrier region
- border region
- boundary region
- breakdown region
- buried region
- channel region
- channel stopреr region
- channel stop region
- charge-transfer region
- collector region
- conduction region
- conductor region
- cutoff region
- deep-UV region
- degenerate region
- depletion mode region
- depletion region
- deuterons implanted region
- diffusion-isolated region
- drain region
- drift region
- D-well region
- encroaching region
- enhanced region
- epitaxial region
- exposed region
- extrinsic region
- field region
- floating region
- forbidden region
- gate region
- graded region
- heavily-doped region
- high-conductivity region
- high-impurity region
- high-resistivity region
- hydrogenated region
- impurity region
- inactive region
- infrared region
- injection region
- injector region
- inset region
- insulation region
- insulator region
- interface region
- intrinsic region
- ion-implanted region
- island region
- isolation region
- junction region
- low-impurity region
- low-resistivity region
- multiplication region
- n region
- narrow-gap region
- near-UV region
- n-tab region
- ohmic contact region
- p region
- peripheral region
- periphery region
- polysilicon-on-охide region
- proton-damaged region
- proton implanted region
- reach-through region
- recessed охide region
- recombination region
- self-aligned regions
- shallow region
- shield region
- silicon-sapphire interface region
- softening region
- source region
- spreading-resistance region
- stack regions
- stepped-doping region
- storage region
- strip-like region
- strip-shaped region
- Strongly n-type region
- subcollector region
- subthreshold region
- superlattice region
- tank region
- terminating region
- thermally grown охide region
- transfer region
- transit-time region
- ultraviolet region
- V-groove region
- weak inversion region
- well region
- wide-gap region -
10 technique
1) метод, спосіб (див. т-ж арproach, method) 2) технологія (див. т-ж technology) - alloying technique
- annular sawing technique
- assembly technique
- automatic layout technique
- automatic test generation technique
- BIMOS technique
- bond etchback technique
- boron etch stop technique
- bump-metallization technique
- CAD technique
- GDI technique
- chip floorplan technique
- chip processing technique
- circuit technique
- CMOS technique
- cold-crucible technique
- cold-processing technique
- collector-diffusion isolation technique
- commutating auto-zeroing technique
- computerized design technique
- CVD technique
- decomposition technique
- definition technique
- development advanced rate technique
- diffused planar technique
- diffusion technique
- double-diffusion technique
- dry processing technique
- electrochemical passivation technique
- electron-beam technique
- electroplating technique
- etch-and-refill technique
- etchback technique
- etch-stop technique
- evaporation technique
- fabrication technique
- film technique
- flip-chip technique
- floating crucible technique
- folding technique
- four-point probe technique
- growth technique
- implant-isolation technique
- incremental time technique
- integrated technique
- interconnection technique
- internal trace technique
- ion-implantation technique
- isolation technique
- laser selective photoionisation technique
- laser-trimming technique
- lifting technique
- lift-off technique
- light-scattering technique
- liquid encapsulation Czochralski technique
- liquid-phase epitaxy technique
- liquid epitaxy technique
- lithographic technique
- masked diffusion technique
- masking technique
- mask-making technique
- masterslice technique
- mesa-fabrication technique
- Minimod technique
- mixed-level technique
- mixed-mode technique
- modified horizontal Bridgman technique
- modified Bridgman technique
- molecular-beam epitaxy technique
- monolithic technique
- mounting technique
- multichip assembly technique
- multiwire technique
- native охide technique
- node tearing technique
- n-type doping technique
- open-tube diffusion technique
- open-tube technique
- optical alignment technique
- oxide masking technique
- oxygen-plasma охidation technique
- packaging technique
- peripheral sawing technique
- photolithographic technique
- photomasking technique
- photomechanical technique
- photoresist lift-off technique
- piecewise linear modeling technique
- planar-epitaxial technique
- plasma-охidation technique
- plasma-spraying technique
- p-n junction isolation technique
- positive photoresist masking technique
- probe technique
- processing technique
- production technique
- production soldering technique
- reduction technique
- resist technique
- SBC technique
- scaling technique
- screen-printing technique
- screen-stencil technique
- self-aligned double-diffusion technique
- serial-writing technique
- shallow V-groove technique
- shrinking technique
- silk-screeningtechnique
- silk-screentechnique
- single-layer interconnection technique
- single-level interconnection technique
- sinking technique
- slice technique
- solder reflow technique
- solute-diffusion technique
- SOS isolation technique
- sparse matrix technique
- staged-diffusion technique
- staining technique
- stencil technique
- step-and-repeat reduction technique
- tape-carrier technique
- test technique
- thermal wave technique
- trench-etch technique
- tri-mask technique
- trimming technique
- two-layer resist technique
- two-phase technique
- two-step technique
- vapor-oxidation technique
- vapor-phase epitaxial technique
- V-ATC technique
- wet technique
- wire-bonding technique
- wire-wrapping technique
- wire-wrap technique
- wiring technique
- 1:1 photomasking techniqueEnglish-Ukrainian dictionary of microelectronics > technique
См. также в других словарях:
Doping (semiconductor) — In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as intrinsic) semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of… … Wikipedia
Doping at the 2007 Tour de France — Part of a series on Doping in sport … Wikipedia
doping impurity type — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
type d'impureté dopante — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
type de dopage — legiravimo priemaišų tipas statusas T sritis radioelektronika atitikmenys: angl. dopant type; doping impurity type vok. Dotierungstyp, m; Störstellentyp, m rus. тип легирующей примеси, m pranc. type de dopage, m; type d impureté dopante, m … Radioelektronikos terminų žodynas
List of doping cases in cycling — The following is an incomplete list of doping cases in cycling, where doping means use of physiological substances or abnormal method to obtain an artificial increase of performance . It is neither a list of shame nor a list of illegality, as the … Wikipedia
N-type semiconductor — N type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in silicon). This creates an excess of negative (n type) electron charge… … Wikipedia
Blood doping — is the practice of boosting the number of red blood cells (RBCs) in the circulation in order to enhance athletic performance. Because they carry oxygen from the lungs to the muscles, more RBCs in the blood can improve an athlete’s aerobic… … Wikipedia
Monolayer doping — (MLD) is a well controlled, wafer scale surface doping technique first developed at the University of California, Berkeley, in 2007.[1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially … Wikipedia
P-type semiconductor — A P type semiconductor (P for Positive) is obtained by carrying out a process of doping: that is, adding a certain type of atoms to the semiconductor in order to increase the number of free charge carriers (in this case positive holes). When the… … Wikipedia
List of doping cases in athletics — Part of a series on Doping in sport … Wikipedia